• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    PUNCH-THROUGH SPACE-CHARGE LIMITED LOADS (RESISTORS).

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    azu_td_8712899_sip1_m.pdf
    Size:
    4.766Mb
    Format:
    PDF
    Description:
    azu_td_8712899_sip1_m.pdf
    Download
    Author
    MUSALLAM, ALI ABDULKAREEM.
    Issue Date
    1987
    Keywords
    Semiconductors.
    Integrated circuits.
    Advisor
    Mattson, Roy H.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    There are several important semiconductor devices in which the transport of carriers is controlled by punch-through space-charge effects. Examples include the Bipolar Mode Static Induction Transistor (BSIT), ultrasmall Punch-through MOSFETs, and BARITT diodes for microwave applications. The development of punch-through space-charge type of devices is a technology motivated by the demanding high density among the IC chips. This dissertation discusses a device which operates in a punch-through condition with space-charge control of currents. It is a two terminal device, which could be fabricated with no deviation from today's technology. The device structure is simple, with two n⁺ or p⁺ regions formed in p⁻ or n⁻ substrate, respectively. Punch-through space-charge limited structures both n⁺p⁻n⁺ and p⁺n⁻p⁺, were simulated using a general one-dimensional semiconductor device performance simulation program GESIM1 for dynamic and static analysis. The results of simulation show that the potential barrier height decreases with increasing applied potential and with a reduction of the spacing L between the n⁺ diffusion in an n⁺p⁻n⁺ structure. The resistance increases as the spacing L is increased. A two-dimensional analytical model of carrier transport in the device was developed. This model accounts for surface effects as well as the space-charge limited flow. Also, a one-dimensional model that includes mobile carriers effects on the device operation. Structures of various configurations were fabricated and tested. Electrical evaluations of these structures provided large value resistors in a remarkably small area compare to traditional integrated resistors. The resistance was observed to increase with the spacing L and with the resistivity of the starting substrate. These punch-through space-charge limited loads should have applications as an alternative approach for integrated resistors in high-speed VLSI applications. They can provide very small area, large value resistors based on the space-charge limiting action of the device. The range of resistance value is large, and small dimensions lead to small capacitance and fast switching times.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Electrical and Computer Engineering
    Graduate College
    Degree Grantor
    University of Arizona
    Collections
    Dissertations

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.