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    DESIGN OF MOS INTEGRATED CIRCUITS AT HIGH TEMPERATURE.

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    Author
    CHAN, TZO YAO.
    Issue Date
    1982
    Keywords
    Metal oxide semiconductors -- Thermal properties.
    Integrated circuits -- Thermal properties.
    Electronic circuit design.
    Heat resistant materials.
    Advisor
    Hamilton, Douglas J.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    Areas which require high-temperature MOS circuits are instrumentations for geothermal and petroleum well-logging, space exploration, aero-propulsion systems, and other hostile environments. MOS digital circuits at high temperature are examined as well as the maximum operating temperature of MOS devices. Factors affecting high-temperature operation of these devices, including threshold voltage sensitivity, mobility degradation, leakage current characterization and interactions, zero-TC current in analog applications and reliability considerations, are discussed. Methods to reduce threshold voltage sensitivities, process modifications to reduce leakage current density at high temperature, circuit techniques to eliminate the leakage current effects, diode compensation, CMOS thermal latch-up and MOS scaling rules at high temperature are investigated. Experimental results of epitaxial diodes to verify the leakage current reduction effect are discussed.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Electrical Engineering
    Graduate College
    Degree Grantor
    University of Arizona
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