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dc.contributor.advisorMontierth, Leland M.en_US
dc.contributor.advisorPeck, John F.en_US
dc.contributor.authorChoi, Hong Kyu.*
dc.creatorChoi, Hong Kyu.en_US
dc.date.accessioned2011-10-31T17:19:46Zen
dc.date.available2011-10-31T17:19:46Zen
dc.date.issued1989en_US
dc.identifier.urihttp://hdl.handle.net/10150/184835en
dc.description.abstractA validated predictive model of a-Si:H solar cell arrays was developed. The performance of a-Si:H solar cells was modeled by predicting the performance before degradation first, and then modifying it with terms that account for degradation and recovery effects. A unique approach for the determination of the fundamental rate controlling parameters for the degradation and recovery process was carried out by observing the variation of the short-circuit current. The experimental annealing of a-Si:H silicon samples showed that the percent recovery from the degraded state to the as-grown state by annealing was virtually independent of the initial state at the start of the annealing process. This allowed the recovery parameters to be determined independently of the prior degradation process. An extremely simple and fast running algorithm for the long-term performance was developed in terms of the incident solar radiation, the panel temperature, and the total radiation exposed. Also it was found that the entire process of the Staebler-Wronski effect could be adequately represented by a correlation in which the degradation and recovery processes are solely a function of the total radiation exposure of the panel at ambient conditions.
dc.language.isoenen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectPhotovoltaic cells -- Mathematical models.en_US
dc.subjectSilicon alloys -- Deterioration.en_US
dc.subjectSilicon alloys -- Effect of radiation on.en_US
dc.titleAnalysis and modeling of the long-term performance of amorphous photovoltaic arrays.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.identifier.oclc703272773en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.leveldoctoralen_US
dc.identifier.proquest9005718en_US
thesis.degree.disciplineNuclear and Energy Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.namePh.D.en_US
refterms.dateFOA2018-08-22T22:18:50Z
html.description.abstractA validated predictive model of a-Si:H solar cell arrays was developed. The performance of a-Si:H solar cells was modeled by predicting the performance before degradation first, and then modifying it with terms that account for degradation and recovery effects. A unique approach for the determination of the fundamental rate controlling parameters for the degradation and recovery process was carried out by observing the variation of the short-circuit current. The experimental annealing of a-Si:H silicon samples showed that the percent recovery from the degraded state to the as-grown state by annealing was virtually independent of the initial state at the start of the annealing process. This allowed the recovery parameters to be determined independently of the prior degradation process. An extremely simple and fast running algorithm for the long-term performance was developed in terms of the incident solar radiation, the panel temperature, and the total radiation exposed. Also it was found that the entire process of the Staebler-Wronski effect could be adequately represented by a correlation in which the degradation and recovery processes are solely a function of the total radiation exposure of the panel at ambient conditions.


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