AuthorNowlin, Robert Nathaniel.
Committee ChairSchrimpf, Ronald D.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractThe experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends.
Degree ProgramElectrical and Computer Engineering