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dc.contributor.authorBoggavarapu, Deepak.
dc.creatorBoggavarapu, Deepak.en_US
dc.date.accessioned2011-10-31T18:09:19Z
dc.date.available2011-10-31T18:09:19Z
dc.date.issued1993en_US
dc.identifier.urihttp://hdl.handle.net/10150/186436
dc.description.abstractThe development of the microcavity laser has opened new vistas for exploration in regard to light-matter interaction. Here, we consider several experimental investigations with these smallest of lasers. Injection of an external optical signal into a vertical cavity surface emitting laser (VCSEL) reveals the weak injection regime of frequency locking and the strong injection regime of asymmetric local modification to the semiconductor gain curve. Above laser threshold linewidth measurements allow us to determine the linewidth enhancement factor, in agreement with theory. Below threshold measurements allow us to deduce carrier density and carrier lifetime. The definition of laser threshold in a microcavity laser has recently come under question. Intensity correlation measurements of the light emitted by a VCSEL exhibit a peak at laser threshold. Theoretical calculations confirm the experimental data and further show that this threshold peak remains even as the spontaneous emission rate into nonlasing modes approaches zero.
dc.language.isoenen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectDissertations, Academic.en_US
dc.subjectOptics.en_US
dc.titlePhysics of semiconductor microcavity lasers.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.contributor.chairGibbs, Hyatten_US
dc.identifier.oclc720675479en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.leveldoctoralen_US
dc.contributor.committeememberPeyghambarian, Nasseren_US
dc.contributor.committeememberPowell, Richard C.en_US
dc.identifier.proquest9408510en_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.namePh.D.en_US
refterms.dateFOA2018-07-17T17:23:39Z
html.description.abstractThe development of the microcavity laser has opened new vistas for exploration in regard to light-matter interaction. Here, we consider several experimental investigations with these smallest of lasers. Injection of an external optical signal into a vertical cavity surface emitting laser (VCSEL) reveals the weak injection regime of frequency locking and the strong injection regime of asymmetric local modification to the semiconductor gain curve. Above laser threshold linewidth measurements allow us to determine the linewidth enhancement factor, in agreement with theory. Below threshold measurements allow us to deduce carrier density and carrier lifetime. The definition of laser threshold in a microcavity laser has recently come under question. Intensity correlation measurements of the light emitted by a VCSEL exhibit a peak at laser threshold. Theoretical calculations confirm the experimental data and further show that this threshold peak remains even as the spontaneous emission rate into nonlasing modes approaches zero.


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