EXTERNAL SWITCHING OF A BISTABLE GALLIUM-ARSENIDE ETALON.
| dc.contributor.advisor | Gibbs, Hyatt M. | en_US |
| dc.contributor.author | TARNG, SHIN-SHENG. | |
| dc.creator | TARNG, SHIN-SHENG. | en_US |
| dc.date.accessioned | 2011-10-31T18:14:36Z | |
| dc.date.available | 2011-10-31T18:14:36Z | |
| dc.date.issued | 1983 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/186624 | |
| dc.description.abstract | The switching energy and speed of a bistable GaAs etalon have been measured. At liquid nitrogen temperature, the switch-on was achieved by injecting a high density of carriers with an above-band-edge 600-nm external pulse. A minimum energy of 1 nJ was required. The measured switching time was 200 ps, limited by the detector response time. The switch-off was obtained by heating the device with a 300-nJ external pulse and consequently shifting the Fabry-Perot peak. Switch-off time was about 40 ns. Room-temperature bistability was first achieved in a GaAs-AlGaAs superlattice etalon. Switch-on by a near-band-edge 845-nm pulse of 10-pJ energy was observed. | |
| dc.language.iso | en | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Optical bistability. | en_US |
| dc.subject | Optical data processing. | en_US |
| dc.title | EXTERNAL SWITCHING OF A BISTABLE GALLIUM-ARSENIDE ETALON. | en_US |
| dc.type | text | en_US |
| dc.type | Dissertation-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 689058249 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | doctoral | en_US |
| dc.contributor.committeemember | Wing William H. | en_US |
| dc.contributor.committeemember | Stegeman, George | en_US |
| dc.identifier.proquest | 8319735 | en_US |
| thesis.degree.discipline | Optical Sciences | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.name | Ph.D. | en_US |
| dc.description.note | This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution images for any content in this item, please contact us at repository@u.library.arizona.edu. | |
| dc.description.admin-note | Original file replaced with corrected file July 2023. | |
| refterms.dateFOA | 2018-08-15T01:49:57Z | |
| html.description.abstract | The switching energy and speed of a bistable GaAs etalon have been measured. At liquid nitrogen temperature, the switch-on was achieved by injecting a high density of carriers with an above-band-edge 600-nm external pulse. A minimum energy of 1 nJ was required. The measured switching time was 200 ps, limited by the detector response time. The switch-off was obtained by heating the device with a 300-nJ external pulse and consequently shifting the Fabry-Perot peak. Switch-off time was about 40 ns. Room-temperature bistability was first achieved in a GaAs-AlGaAs superlattice etalon. Switch-on by a near-band-edge 845-nm pulse of 10-pJ energy was observed. |
