• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    SOLID SOURCE CHEMICAL VAPOR DEPOSITION OF REFRACTORY METAL SILICIDES FOR VLSI INTERCONNECTS.

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    azu_td_8500463_sip1_w.pdf
    Size:
    6.004Mb
    Format:
    PDF
    Download
    Author
    HEY, HANS PETER WILLY.
    Issue Date
    1984
    Keywords
    Integrated circuits -- Very large scale integration.
    Thin-film circuits.
    Advisor
    Mattson, Roy
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    Low resistance gate level interconnects can free the design of VLSI circuits from the R-C time constant limitations currently imposed by poly-silicon based technology. The hotwall low pressure chemical vapor deposition of molybdenum and tungsten silicide from their commercially available hexacarbonyls and silane is presented as a deposition method producing IC-compatible gate electrodes of reduced resistivity. Good hotwall deposition uniformity is demonstrated at low temperatures (200 to 300 C). The as-deposited films are amorphous by x-ray diffraction and can be crystallized in subsequent anneal steps with anneal induced film shrinkage of less than 12 percent. Surface oxide formation is possible during this anneal cycle. Auger spectroscopy and Rutherford backscattering results indicate that silicon-rich films can be deposited, and that the concentrations of carbon and oxygen incorporated from the carbonyl source are a function of the deposition parameters. At higher deposition temperatures and larger source throughput the impurity incorporation is markedly reduced. Good film adhesion and excellent step coverage are observed. Electrical measurements show that the film resistivities after anneal are comparable to those of sputtered or evaporated silicide films. Bias-temperature capacitance-voltage measurements demonstrate that direct silicide gate electrodes have properties comparable to standard metal-oxide-silicon systems. The substitution of CVD silicides for standard MOS gate metals appears to be transparent in terms of transistor performance, except for work function effects on the threshold voltage. The large wafer throughput and good step coverage of hotwall low pressure silicide deposition thus promises to become a viable alternative to the poly-silicon technology currently in use.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Electrical and Computer Engineering
    Graduate College
    Degree Grantor
    University of Arizona
    Collections
    Dissertations

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.