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dc.contributor.advisorGibbs, Hyatt M.en_US
dc.contributor.authorOVADIA, SHLOMO.
dc.creatorOVADIA, SHLOMO.en_US
dc.date.accessioned2011-10-31T18:52:58Zen
dc.date.available2011-10-31T18:52:58Zen
dc.date.issued1984en_US
dc.identifier.urihttp://hdl.handle.net/10150/187835en
dc.description.abstractThe fundamental limitations on the operation of optical bistable devices in a ring cavity and in GaAs etalons are investigated. Experimental results of spontaneous transitions due to shot noise fluctuations are found in good agreement with various "ladder" models, if one allows the counting rates to vary accordingly. Stability analysis for two-photon homogeneously broadened media reveals single-wavelength instabilities for the laser but not for absorptive optical bistability. Appreciable regions of sidemode gain exist for both problems allowing for multiwavelength instabilities to occur. GaAs bistable devices show attractive features such as low power and high speed at room temperature for optical processing. However, experimental evidence in GaAs confirm the computer simulations of bistability that cavity losses, due to unsaturable background absorption, limit the switching power at room temperature. Methods to overcome the different limitations in GaAs devices toward parallel computation are then addressed from a system approach.
dc.language.isoenen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectOptical bistability.en_US
dc.subjectNonlinear optics.en_US
dc.titleFUNDAMENTAL LIMITATIONS ON THE OPERATION OF OPTICAL BISTABLE DEVICES IN A RING CAVITY AND IN GALLIUM-ARSENIDE ETALONS.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.identifier.oclc693373415en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.leveldoctoralen_US
dc.contributor.committeememberDror, Sariden_US
dc.identifier.proquest8504128en_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.namePh.D.en_US
refterms.dateFOA2018-09-03T15:04:46Z
html.description.abstractThe fundamental limitations on the operation of optical bistable devices in a ring cavity and in GaAs etalons are investigated. Experimental results of spontaneous transitions due to shot noise fluctuations are found in good agreement with various "ladder" models, if one allows the counting rates to vary accordingly. Stability analysis for two-photon homogeneously broadened media reveals single-wavelength instabilities for the laser but not for absorptive optical bistability. Appreciable regions of sidemode gain exist for both problems allowing for multiwavelength instabilities to occur. GaAs bistable devices show attractive features such as low power and high speed at room temperature for optical processing. However, experimental evidence in GaAs confirm the computer simulations of bistability that cavity losses, due to unsaturable background absorption, limit the switching power at room temperature. Methods to overcome the different limitations in GaAs devices toward parallel computation are then addressed from a system approach.


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