• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    LPCVD TUNGSTEN MULTILAYER METALLIZATION FOR VLSI SYSTEMS.

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    azu_td_8517500_sip1_c.pdf
    Size:
    11.66Mb
    Format:
    PDF
    Download
    Author
    KRISHT, MUHAMMED HUSSEIN.
    Issue Date
    1985
    Keywords
    Integrated circuits -- Very large scale integration.
    Thin-film circuits.
    Tungsten.
    Advisor
    Hamilton, Douglas
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    Advances in microlithography, dry etching, scaling of devices, ion-implantation, process control, and computer aid design brought the integrated circuit technology into the era of VLSI circuits. Those circuits are characterized by high packing density, improved performance, complex circuits, and large chip sizes. Interconnects and their spacing dominate the chip area of VLSI circuits and they degrade the circuit performance through the unacceptable high time delays. Multilayer metallization enables shorter interconnects, ease of design and yet higher packing density for VLSI circuits. It was shown in this dissertation that, tungsten films deposited in a cold-wall LPCVD reactor offer viable solution to the problems of VLSI multilayer interconnects. Experiments showed that LPCVD tungsten films have good uniformity, high purity, low resistivity, low stress-good adherence and are readily patterned into high resolution lines. Moreover, a multilayer interconnect system consisting of three layers of tungsten metallization followed by a fourth layer of aluminum metallization has been designed, fabricated and tested. The interlevel dielectric used to separate the metal layers was CVD phosphorus doped silicon dioxide. Low ohmic contacts were achieved for heavily doped silicon. Also, low resistance tungsten-tungsten intermetallic contacts were obtained. In addition to excellent step coverage, high electromigration resistance of interconnects was realized. Finally, CMOS devices and logic gates were successfully fabricated and tested using tungsten multilayer metallization schemes.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Electrical and Computer Engineering
    Graduate College
    Degree Grantor
    University of Arizona
    Collections
    Dissertations

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.