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dc.contributor.authorFang, Yizhou
dc.contributor.authorJiang, Feng
dc.contributor.authorMuscat, Anthony J.
dc.date.accessioned2012-01-17T23:18:10Z
dc.date.available2012-01-17T23:18:10Z
dc.date.issued2011-11-04
dc.identifier.urihttp://hdl.handle.net/10150/203549
dc.description.abstractA copper indium disulfide (CuInS₂ or CIS) film could potentially be used as the absorber layer in a solar cell that converts solar energy into electricity. CuInS₂ was chosen to lower the cost and environmental impact of manufacturing as an alternate to Si solar cells. The objective of this project is to deposit a uniform CuInS₂ film with a thickness of 2-3 μm. Both spin-coating and painting methods were compared. The substrate, oxidation method, and sulfurization temperature were varied and characterized.
dc.language.isoen_USen_US
dc.relation.urlhttp://arizona.openrepository.com/arizona/handle/10150/203821
dc.rightsCopyright © is held by the author. 
dc.titleDeposition of CuInS₂ Absorber Layer for a Prototype Solar Cellen_US
dc.contributor.departmentChemical and Environmental Engineeringen_US
dc.description.collectioninformationThis item is part of the GPSC Student Showcase collection. For more information about the Student Showcase, please email the GPSC (Graduate and Professional Student Council) at gpsc@email.arizona.edu.en_US
refterms.dateFOA2018-06-25T02:55:47Z
html.description.abstractA copper indium disulfide (CuInS₂ or CIS) film could potentially be used as the absorber layer in a solar cell that converts solar energy into electricity. CuInS₂ was chosen to lower the cost and environmental impact of manufacturing as an alternate to Si solar cells. The objective of this project is to deposit a uniform CuInS₂ film with a thickness of 2-3 μm. Both spin-coating and painting methods were compared. The substrate, oxidation method, and sulfurization temperature were varied and characterized.


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