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dc.contributor.authorGerber, Donald Stuart.
dc.creatorGerber, Donald Stuart.en_US
dc.date.accessioned2013-03-21T11:44:10Zen
dc.date.available2013-03-21T11:44:10Zen
dc.date.issued1983en_US
dc.identifier.urihttp://hdl.handle.net/10150/274932en
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectDiodes.en_US
dc.subjectIonic solutions -- Analysis.en_US
dc.titleA PARAMETRIC STUDY OF THE PN JUNCTION C-V(G) CHARACTERISTIC OF THE GATE-CONTROLLED DIODE FOR USE AS AN IONIC CONCENTRATION SENSOR.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc11941989en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1322293en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b1504256xen_US
refterms.dateFOA2018-08-27T04:00:32Z


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