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dc.contributor.authorEdwards, William Robert.
dc.creatorEdwards, William Robert.en_US
dc.date.accessioned2013-03-21T12:04:33Z
dc.date.available2013-03-21T12:04:33Z
dc.date.issued1982en_US
dc.identifier.urihttp://hdl.handle.net/10150/275508
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectTransistors -- Effect of radiation on.en_US
dc.subjectJunction transistors.en_US
dc.subjectField-effect transistors.en_US
dc.subjectIntegrated circuits -- Effect of radiation on.en_US
dc.titleRADIATION EFFECTS ON VERTICAL CHANNEL JUNCTION FIELD EFFECT TRANSISTORS.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc10504741en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1319213en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b14446893en_US
refterms.dateFOA2018-08-27T07:23:58Z


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