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dc.contributor.advisorFahey, Walter J.en_US
dc.contributor.authorMazdiyasni, Parviz, 1960-
dc.creatorMazdiyasni, Parviz, 1960-en_US
dc.date.accessioned2013-03-28T10:10:45Z
dc.date.available2013-03-28T10:10:45Z
dc.date.issued1987en_US
dc.identifier.urihttp://hdl.handle.net/10150/276606
dc.description.abstractIsotropic and anisotropic etching have been used in silicon processing for the past few decades. However, optimization and adaptation of anisotropic etching to standard I.C. fabrication is a more recent technology. This paper describes new methods for process and material optimization in Orientation and Concentration dependent etching of the (1 0 0) plane in silicon. Furthermore, methods of oxide and nitride pinhole detection in (1 0 0) planes in silicon are presented. New mask alignment techniques to obtain an accurate etch front termination in silicon are also shown.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectEtching.en_US
dc.subjectSilicon.en_US
dc.subjectIntegrated circuits -- Design and construction.en_US
dc.titleA new technique for optimizing orientation dependent etching of silicon: Process and methoden_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc19371678en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1332470en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b18395697en_US
refterms.dateFOA2018-06-24T18:09:42Z
html.description.abstractIsotropic and anisotropic etching have been used in silicon processing for the past few decades. However, optimization and adaptation of anisotropic etching to standard I.C. fabrication is a more recent technology. This paper describes new methods for process and material optimization in Orientation and Concentration dependent etching of the (1 0 0) plane in silicon. Furthermore, methods of oxide and nitride pinhole detection in (1 0 0) planes in silicon are presented. New mask alignment techniques to obtain an accurate etch front termination in silicon are also shown.


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