Avalanche characteristics of silicide Schottky barrier diodes
| dc.contributor.advisor | Dereniak, E. L. | en_US |
| dc.contributor.author | Yates, Kenneth Lee, 1959- | |
| dc.creator | Yates, Kenneth Lee, 1959- | en_US |
| dc.date.accessioned | 2013-03-28T10:11:37Z | |
| dc.date.available | 2013-03-28T10:11:37Z | |
| dc.date.issued | 1987 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/276634 | |
| dc.description.abstract | This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.) | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Diodes, Schottky-barrier. | en_US |
| dc.subject | Infrared detectors. | en_US |
| dc.title | Avalanche characteristics of silicide Schottky barrier diodes | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 20061288 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1332547 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.discipline | Optical Sciences | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b16916542 | en_US |
| refterms.dateFOA | 2018-08-17T13:26:59Z | |
| html.description.abstract | This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.) |
