Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS
KeywordsMetal oxide semiconductor field-effect transistors.
Metal oxide semiconductors -- Mathematical models.
AdvisorSchrimpf, Ron D.
Hohl, Jakob H.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractThe Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model closely estimates Emax is found. Variation in Emax with change of junction depth Xj is investigated. The electric field, Ex, as it varies with depth in the channel is investigated, and compared to the Jain and Balk approximation. The deviations suggest that the model must break down for short channels.
Degree ProgramGraduate College
Electrical and Computer Engineering