Simulation of polymer-deposition controlled trench etching in silicon
Author
Sun, Chin-Yang, 1957-Issue Date
1988Keywords
Semiconductors -- Etching -- Simulation methods.Integrated circuits -- Design -- Simulation methods.
Advisor
Carlile, Robert N.
Metadata
Show full item recordPublisher
The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Abstract
Reactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.Type
textThesis-Reproduction (electronic)
Degree Name
M.S.Degree Level
mastersDegree Program
Graduate CollegeElectrical & Computer Engineering