Simulation of polymer-deposition controlled trench etching in silicon
AuthorSun, Chin-Yang, 1957-
KeywordsSemiconductors -- Etching -- Simulation methods.
Integrated circuits -- Design -- Simulation methods.
AdvisorCarlile, Robert N.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractReactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.
Degree ProgramGraduate College
Electrical & Computer Engineering