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dc.contributor.advisorCarlile, Robert N.en_US
dc.contributor.authorSun, Chin-Yang, 1957-en_US
dc.creatorSun, Chin-Yang, 1957-en_US
dc.date.accessioned2013-03-28T10:17:59Zen
dc.date.available2013-03-28T10:17:59Zen
dc.date.issued1988en_US
dc.identifier.urihttp://hdl.handle.net/10150/276803en
dc.description.abstractReactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectSemiconductors -- Etching -- Simulation methods.en_US
dc.subjectIntegrated circuits -- Design -- Simulation methods.en_US
dc.titleSimulation of polymer-deposition controlled trench etching in siliconen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc22271730en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1334364en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical & Computer Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b17390539en_US
refterms.dateFOA2018-08-27T09:28:21Z
html.description.abstractReactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.


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