Scanning tunneling microscopy of layered-structure semiconductors
| dc.contributor.advisor | Sarid, Dror | en_US |
| dc.contributor.author | Henson, Tammy Deanne, 1964- | |
| dc.creator | Henson, Tammy Deanne, 1964- | en_US |
| dc.date.accessioned | 2013-03-28T10:18:09Z | |
| dc.date.available | 2013-03-28T10:18:09Z | |
| dc.date.issued | 1988 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/276807 | |
| dc.description.abstract | Semiconductors are characterized by atomic resolution imaging and density of states measurements (DOS) obtained through the use of a scanning tunneling microscope (STM). The DOS of the conduction and valence bands can be measured separately with a STM as opposed to an optical measurement which measures only the joint DOS. Layered-structure semiconductors are characterized both in the bulk form and in the isolated cluster form. Images of three bulk layered-structure semiconductors, MoS₂, WSe₂, and SnS₂, were obtained with both positive and negative sample-to-tip bias voltages. Curves of tunneling current as a function of bias voltage were measured, from which the DOS of the valence and conduction bands can be inferred. We obtained an atomically resolved image of an isolated fragment of a semi-conductor cluster which was deposited on a graphite surface from a colloidal suspension of BiI₃. Also imaged were clusters of MoS₂ layered-structure semiconductors. | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Scanning tunneling microscopy. | en_US |
| dc.subject | Layer structure (Solids) | en_US |
| dc.subject | Semiconductors. | en_US |
| dc.title | Scanning tunneling microscopy of layered-structure semiconductors | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 21728740 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1335052 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.discipline | Optical Sciences | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b17301300 | en_US |
| refterms.dateFOA | 2018-04-26T22:20:40Z | |
| html.description.abstract | Semiconductors are characterized by atomic resolution imaging and density of states measurements (DOS) obtained through the use of a scanning tunneling microscope (STM). The DOS of the conduction and valence bands can be measured separately with a STM as opposed to an optical measurement which measures only the joint DOS. Layered-structure semiconductors are characterized both in the bulk form and in the isolated cluster form. Images of three bulk layered-structure semiconductors, MoS₂, WSe₂, and SnS₂, were obtained with both positive and negative sample-to-tip bias voltages. Curves of tunneling current as a function of bias voltage were measured, from which the DOS of the valence and conduction bands can be inferred. We obtained an atomically resolved image of an isolated fragment of a semi-conductor cluster which was deposited on a graphite surface from a colloidal suspension of BiI₃. Also imaged were clusters of MoS₂ layered-structure semiconductors. |
