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dc.contributor.advisorSchrimpf, R. D.en_US
dc.contributor.authorChen, Hao
dc.creatorChen, Hao, 1958-en_US
dc.date.accessioned2013-03-28T10:20:07Z
dc.date.available2013-03-28T10:20:07Z
dc.date.issued1988en_US
dc.identifier.urihttp://hdl.handle.net/10150/276861
dc.description.abstractA one-dimensional analytical model of dark current has been developed to facilitate the investigation and analysis of dark current from gate-controlled photovoltaic InSb arrays. The applied gate voltage is an essential parameter in the model. The expressions relating this parameter to surface potential are derived separately for the cases of accumulation and depletion at the surface of n-type InSb material under the gate. In addition, the measured dark current is compared with that from the analytical model, and the discrepancy is discussed in terms of the intrinsic carrier concentration, surface recombination velocity, and geometry of the array. The components of dark current are mainly associated with surface state generation-recombination, field induced tunneling, and the depletion region from the bulk and surface. The experimental results are obtained at temperatures between 30K and 40K.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectPhotovoltaic cells.en_US
dc.subjectIndium antimonide crystals.en_US
dc.subjectElectric currents -- Measurement.en_US
dc.titleOne dimensional theoretical and experimental analysis of the dark current in an indium-antimide hybrid photovoltaic focal plane arrayen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc22470613en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1335673en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b17436813en_US
refterms.dateFOA2018-06-04T16:41:00Z
html.description.abstractA one-dimensional analytical model of dark current has been developed to facilitate the investigation and analysis of dark current from gate-controlled photovoltaic InSb arrays. The applied gate voltage is an essential parameter in the model. The expressions relating this parameter to surface potential are derived separately for the cases of accumulation and depletion at the surface of n-type InSb material under the gate. In addition, the measured dark current is compared with that from the analytical model, and the discrepancy is discussed in terms of the intrinsic carrier concentration, surface recombination velocity, and geometry of the array. The components of dark current are mainly associated with surface state generation-recombination, field induced tunneling, and the depletion region from the bulk and surface. The experimental results are obtained at temperatures between 30K and 40K.


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