Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
| dc.contributor.advisor | Schrimpf, Ronald D. | en_US |
| dc.contributor.author | Song, Shiunn Luen Steven, 1960- | |
| dc.creator | Song, Shiunn Luen Steven, 1960- | en_US |
| dc.date.accessioned | 2013-03-28T10:20:58Z | |
| dc.date.available | 2013-03-28T10:20:58Z | |
| dc.date.issued | 1988 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/276882 | |
| dc.description.abstract | The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product. | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Junction transistors. | en_US |
| dc.subject | Field-effect transistors. | en_US |
| dc.subject | Integrated circuits -- Design. | en_US |
| dc.title | Characterization and design of the complementary JFET LAMBDA-DIODE SRAM | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 22499577 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1335701 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.discipline | Electrical and Computer Engineering | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b17444457 | en_US |
| refterms.dateFOA | 2018-09-04T03:01:28Z | |
| html.description.abstract | The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product. |
