The analysis of current-mirror MOSFETs for use in radiation environments
| dc.contributor.author | Martinez, Marino Juan, 1965- | |
| dc.creator | Martinez, Marino Juan, 1965- | en_US |
| dc.date.accessioned | 2013-03-28T10:21:55Z | |
| dc.date.available | 2013-03-28T10:21:55Z | |
| dc.date.issued | 1988 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/276910 | |
| dc.description.abstract | Experiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-cell MOSFETs for applications which require radiation exposure. A constant-current op-amp circuit showed minimal current shifts, using proper circuit design, following total-dose exposure. Dose-rate testing showed the feasibility of using sense voltage to trigger g&d2; protection through drain-source voltage clamping, providing a relatively inexpensive alternative to voltage derating. | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Metal oxide semiconductor field-effect transistors. | en_US |
| dc.subject | Extraterrestrial radiation. | en_US |
| dc.title | The analysis of current-mirror MOSFETs for use in radiation environments | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 22246778 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1335833 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.discipline | Electrical and Computer Engineering | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b17387413 | en_US |
| refterms.dateFOA | 2018-09-04T03:04:06Z | |
| html.description.abstract | Experiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-cell MOSFETs for applications which require radiation exposure. A constant-current op-amp circuit showed minimal current shifts, using proper circuit design, following total-dose exposure. Dose-rate testing showed the feasibility of using sense voltage to trigger g&d2; protection through drain-source voltage clamping, providing a relatively inexpensive alternative to voltage derating. |
