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    Materials research on metallized aluminum-nitride for microelectronic packaging

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    Author
    Newberg, Carl Edward, 1962-
    Issue Date
    1988
    Keywords
    Aluminum compounds.
    Nitrides.
    Integrated circuits -- Materials -- Electric properties.
    Integrated circuits -- Materials -- Mechanical properties.
    Integrated circuits -- Materials -- Thermal properties.
    Advisor
    Risbud, Subhash H.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    The use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal conductivity do not affect the adhesion of the thick film pastes. However, it was found that the lack of certain elements in the binder of the thick film paste could lead to weaker adhesion, and severe degradation of the thick film's adhesion during thermal cycling.
    Type
    text
    Thesis-Reproduction (electronic)
    Degree Name
    M.S.
    Degree Level
    masters
    Degree Program
    Graduate College
    Materials Science and Engineering
    Degree Grantor
    University of Arizona
    Collections
    Master's Theses

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