Materials research on metallized aluminum-nitride for microelectronic packaging
AuthorNewberg, Carl Edward, 1962-
Integrated circuits -- Materials -- Electric properties.
Integrated circuits -- Materials -- Mechanical properties.
Integrated circuits -- Materials -- Thermal properties.
AdvisorRisbud, Subhash H.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractThe use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal conductivity do not affect the adhesion of the thick film pastes. However, it was found that the lack of certain elements in the binder of the thick film paste could lead to weaker adhesion, and severe degradation of the thick film's adhesion during thermal cycling.
Degree ProgramGraduate College
Materials Science and Engineering