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dc.contributor.advisorRisbud, Subhash H.en_US
dc.contributor.authorNewberg, Carl Edward, 1962-
dc.creatorNewberg, Carl Edward, 1962-en_US
dc.date.accessioned2013-03-28T10:22:00Z
dc.date.available2013-03-28T10:22:00Z
dc.date.issued1988en_US
dc.identifier.urihttp://hdl.handle.net/10150/276913
dc.description.abstractThe use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal conductivity do not affect the adhesion of the thick film pastes. However, it was found that the lack of certain elements in the binder of the thick film paste could lead to weaker adhesion, and severe degradation of the thick film's adhesion during thermal cycling.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectAluminum compounds.en_US
dc.subjectNitrides.en_US
dc.subjectIntegrated circuits -- Materials -- Electric properties.en_US
dc.subjectIntegrated circuits -- Materials -- Mechanical properties.en_US
dc.subjectIntegrated circuits -- Materials -- Thermal properties.en_US
dc.titleMaterials research on metallized aluminum-nitride for microelectronic packagingen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc22227694en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1335837en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineMaterials Science and Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b17381526en_US
refterms.dateFOA2018-09-04T03:05:26Z
html.description.abstractThe use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal conductivity do not affect the adhesion of the thick film pastes. However, it was found that the lack of certain elements in the binder of the thick film paste could lead to weaker adhesion, and severe degradation of the thick film's adhesion during thermal cycling.


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