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    Modification of Schottky diode performance due to ion bombardment

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    Author
    Arnold, John Christopher, 1964-
    Issue Date
    1989
    Keywords
    Diodes, Schottky-barrier.
    Ion bombardment.
    Advisor
    Carlile, R. N.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.
    Type
    text
    Thesis-Reproduction (electronic)
    Degree Name
    M.S.
    Degree Level
    masters
    Degree Program
    Graduate College
    Electrical and Computer Engineering
    Degree Grantor
    University of Arizona
    Collections
    Master's Theses

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