Two-dimensional device simulation of junction termination structures for determination of breakdown behavior

Abstract

In this work, we have investigated numerical techniques to determine the breakdown behavior of complex semiconductor devices using two-dimensional simulation. In particular, we have augmented the device simulator SEPSIP with a capability for handling single and multiple floating field rings, and for handling devices with slanted edges. We have furthermore improved the grid width selection algorithm in SEPSIP. A capability for plotting equi-field contours was added to the code. Finally, all system dependencies were removed from the SEPSIP code, and a new version of SEPSIP (Version 2.0) was generated which can be executed on any PC/XT, PC/AT, or PC/386 compatible computer. This eliminates the need for transfering files back and forth between the PC, which had formerly been used as an I/O processor, and the VAX, which was used for numerically intensive computations. It also makes the code more accessible to scientists and engineers who are working in this important research area.