Simulation of radiation-induced parametric degradation in electronic amplifiers
| dc.contributor.advisor | Schrimpf, Ronald D. | en_US |
| dc.contributor.author | Barbara, Nabil Victor, 1964- | |
| dc.creator | Barbara, Nabil Victor, 1964- | en_US |
| dc.date.accessioned | 2013-03-28T10:30:24Z | |
| dc.date.available | 2013-03-28T10:30:24Z | |
| dc.date.issued | 1989 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/277143 | |
| dc.description.abstract | Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation. | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Metal oxide semiconductor field-effect transistors -- Effect of radiation on. | en_US |
| dc.subject | Amplifiers (Electronics) | en_US |
| dc.title | Simulation of radiation-induced parametric degradation in electronic amplifiers | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| dc.identifier.oclc | 23676397 | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1338841 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.discipline | Electrical and Computer Engineering | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b17657052 | en_US |
| refterms.dateFOA | 2018-04-26T17:34:44Z | |
| html.description.abstract | Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation. |
