The electrostatic nature of contaminative particles in a semiconductor processing plasma
Publisher
The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Abstract
Two models are presented to describe the immediate environment surrounding negatively charged contaminants in an idealized plasma. The first model uses Poisson's equation to determine the contaminant charge and voltage. This model predicts a critical radius of 40 microns or less below which Poisson's equation is no longer valid. For contaminant radii less than 40 microns, the Coulomb potential is used to find the contaminant charge and voltage. Both models predict negative charges on the order of 10-14 Coulombs, and voltages on the same order of magnitude as the electron energy.Type
textThesis-Reproduction (electronic)
Degree Name
M.S.Degree Level
mastersDegree Program
Graduate CollegeElectrical and Computer Engineering