Analysis of techniques to separate the ionizing-radiation-induced charge components in irradiated MOSFETs
AuthorWeber, William Martin, 1966-
AdvisorSchrimpf, Ronald D.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractPower Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies for spaceborne electronic systems. Spacecraft are routinely subjected to ionizing radiation. Ionizing-radiation-induced charges alter the operation of the MOSFET. The mid-gap technique allows separation of the parameter shifts into components due to oxide trapped charge and interface trapped charge. However, non-linearity in the subthreshold curve results in an approximately 20% underestimation of the interface component of the threshold shift. A new characterization technique is presented based on the relation between gate charge and gate-source voltage. The results obtained using the gate-charge method agree with theoretical calculations.