Gate-charge characterization of irradiated N-channel power MOSFETs
AuthorYiin, Andy Jyhpyng, 1962-
AdvisorSchrimpf, Ronald D.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractThe effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.
Degree ProgramGraduate College
Electrical and Computer Engineering