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    Gate-charge characterization of irradiated N-channel power MOSFETs

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    Author
    Yiin, Andy Jyhpyng, 1962-
    Issue Date
    1991
    Keywords
    Engineering, Electronics and Electrical.
    Advisor
    Schrimpf, Ronald D.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    The effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.
    Type
    text
    Thesis-Reproduction (electronic)
    Degree Name
    M.S.
    Degree Level
    masters
    Degree Program
    Graduate College
    Electrical and Computer Engineering
    Degree Grantor
    University of Arizona
    Collections
    Master's Theses

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