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dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.contributor.authorYiin, Andy Jyhpyng, 1962-
dc.creatorYiin, Andy Jyhpyng, 1962-en_US
dc.date.accessioned2013-04-03T13:05:19Zen
dc.date.available2013-04-03T13:05:19Zen
dc.date.issued1991en_US
dc.identifier.urihttp://hdl.handle.net/10150/277890en
dc.description.abstractThe effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.titleGate-charge characterization of irradiated N-channel power MOSFETsen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1343839en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b26882796en_US
refterms.dateFOA2018-08-17T22:15:00Z
html.description.abstractThe effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.


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