Deposition characteristics of metal contaminants from HF-based solutions onto wafer surfaces
| dc.contributor.advisor | Parks, Harold G. | en_US |
| dc.contributor.author | Hsu, Eugene, 1966- | |
| dc.creator | Hsu, Eugene, 1966- | en_US |
| dc.date.accessioned | 2013-04-03T13:11:01Z | |
| dc.date.available | 2013-04-03T13:11:01Z | |
| dc.date.issued | 1991 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10150/278049 | |
| dc.description.abstract | Metal contamination levels are a growing concern in integrated circuit manufacturing because they degrade electrical performance. This work uses statistical design of experiments to determine deposition characteristics of transition and heavy metal contaminants onto silicon surfaces from process chemicals that are used in wafer cleaning. Copper, gold, molybdenum, silver, lead, chromium, tin, titanium, manganese, and tungsten were added to buffered oxide etchant (BOE or BHF) and hydrofluoric acid (HF) solutions. Wafers were immersed in these solutions and evaluated by total reflection x-ray fluoresence (TXRF) surface analysis. For those metals that are found to deposit from solution, statistical analysis is utilized to develop empirical models which describe the deposition characteristics. | |
| dc.language.iso | en_US | en_US |
| dc.publisher | The University of Arizona. | en_US |
| dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
| dc.subject | Chemistry, Physical. | en_US |
| dc.subject | Engineering, Electronics and Electrical. | en_US |
| dc.subject | Physics, Electricity and Magnetism. | en_US |
| dc.title | Deposition characteristics of metal contaminants from HF-based solutions onto wafer surfaces | en_US |
| dc.type | text | en_US |
| dc.type | Thesis-Reproduction (electronic) | en_US |
| thesis.degree.grantor | University of Arizona | en_US |
| thesis.degree.level | masters | en_US |
| dc.identifier.proquest | 1346721 | en_US |
| thesis.degree.discipline | Graduate College | en_US |
| thesis.degree.name | M.S. | en_US |
| dc.identifier.bibrecord | .b27252929 | en_US |
| refterms.dateFOA | 2018-08-27T13:00:36Z | |
| html.description.abstract | Metal contamination levels are a growing concern in integrated circuit manufacturing because they degrade electrical performance. This work uses statistical design of experiments to determine deposition characteristics of transition and heavy metal contaminants onto silicon surfaces from process chemicals that are used in wafer cleaning. Copper, gold, molybdenum, silver, lead, chromium, tin, titanium, manganese, and tungsten were added to buffered oxide etchant (BOE or BHF) and hydrofluoric acid (HF) solutions. Wafers were immersed in these solutions and evaluated by total reflection x-ray fluoresence (TXRF) surface analysis. For those metals that are found to deposit from solution, statistical analysis is utilized to develop empirical models which describe the deposition characteristics. |
