• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Master's Theses
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Master's Theses
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    Comparison of Monte Carlo and analytic critical area calculation

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    azu_td_1349457_sip1_m.pdf
    Size:
    2.315Mb
    Format:
    PDF
    Download
    Author
    Lee, Li-Chyn, 1965-
    Issue Date
    1992
    Keywords
    Engineering, Electronics and Electrical.
    Advisor
    Parks, Harold G.
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    Since the profitability of VLSI industries is related to yield, the IC manufacturer finds it highly desirable to be able to predict the yield by computer-aided methods. A key part in the procedure to obtain yield by computer simulation is to find the critical area of a layout. This thesis is primarily devoted to the calculations of critical area. There are two techniques to find the critical area. In the first technique, an analytic method was used to analyze the circuit geometry in order to find the critical area. In the second technique a Monte Carlo Method is used. A program using this Monte Carlo yield simulation (the main method used in this thesis) has been developed for determining critical area of the metal layer of a 4K random access memory. The analytic method is used in a supporting way. The thesis also proposes an easy method to process the vast amount of layout database. This method reduces the time consumed by Monte Carlo simulation.
    Type
    text
    Thesis-Reproduction (electronic)
    Degree Name
    M.S.
    Degree Level
    masters
    Degree Program
    Graduate College
    Degree Grantor
    University of Arizona
    Collections
    Master's Theses

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.