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dc.contributor.advisorParks, Harold G.en_US
dc.contributor.authorDeLoach, Charles Alan, 1960-*
dc.creatorDeLoach, Charles Alan, 1960-en_US
dc.date.accessioned2013-04-03T13:16:36Z
dc.date.available2013-04-03T13:16:36Z
dc.date.issued1992en_US
dc.identifier.urihttp://hdl.handle.net/10150/278211
dc.description.abstractThree metal compositions are patterned via plasma etching into comb structures. The comb structures have pitches of 4 μm, 5 μm, 7 μm and 12 μm, with a line width of 2 μm, on a field oxide of 8,000 Angstroms thickness, using <111> p-type substrates. These comb test structures have been used to determine the number of bridges, and thus the yield, of the metal compositions: pure aluminum, silicon(2%)-aluminum, and copper(0.5%)-silicon(2%)-aluminum. Bridge failures are photographed and classified according to the source of the defect. The defects due to plasma particles are used to determine a yield model for this etch process. Through the use of yield model and test structure data the etch process is evaluated for the different metal systems. This allows a quantitative comparison of the systems in terms of defect clustering, defect density and defect size distribution, and hence projections for the best yielding process via the yield model.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.titleAnalysis of plasma etch defects utilizing a comb test structureen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1350779en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b25469605en_US
refterms.dateFOA2018-08-27T13:33:16Z
html.description.abstractThree metal compositions are patterned via plasma etching into comb structures. The comb structures have pitches of 4 μm, 5 μm, 7 μm and 12 μm, with a line width of 2 μm, on a field oxide of 8,000 Angstroms thickness, using <111> p-type substrates. These comb test structures have been used to determine the number of bridges, and thus the yield, of the metal compositions: pure aluminum, silicon(2%)-aluminum, and copper(0.5%)-silicon(2%)-aluminum. Bridge failures are photographed and classified according to the source of the defect. The defects due to plasma particles are used to determine a yield model for this etch process. Through the use of yield model and test structure data the etch process is evaluated for the different metal systems. This allows a quantitative comparison of the systems in terms of defect clustering, defect density and defect size distribution, and hence projections for the best yielding process via the yield model.


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