Characterization techniques for contaminated gate oxide
Publisher
The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Abstract
The effect of homogeneous contamination on the oxide integrity is studied by electrical measurements. The contamination is introduced in the Buffered Oxide Etchant (BOE) used for the pre-oxidation clean. The DC parametric test of forcing 1 nA and measuring voltage across the oxide is used to relate contamination to the leakage current and also to the number of failures. The factors affecting the measured voltage such as temperature, light and noise are eliminated so that contamination dominates the change in the measured voltage. The current-transport mechanism through the oxide was found to obey the Fowler-Nordheim equation at high fields. The barrier height at both interfaces was lowered in some devices. A technique for measuring the low-field breakdown which is caused by defects in the oxide is developed.Type
textThesis-Reproduction (electronic)