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    Structural and electrical characterization of low-dose low-energy SIMOX materials

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    Author
    Jeoung, Jun Sik
    Issue Date
    2004
    Keywords
    Engineering, Electronics and Electrical.
    Engineering, Materials Science.
    Advisor
    Seraphin, Supapan
    
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    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    The effects of implantation dose, energy, and annealing conditions on the microstructure and the formation and evolution of defects in the low-dose, low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy, scanning electron microscopy (SEM), optical microscopy secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectrometry (RBS). The quality of top Si layer and buried oxide layer (BOX) was also characterized with the electrical measurements. From the structural characterization of 100 keV implanted samples, it was found that the optimum dose window to form a continuous BOX layer after annealing was 3.0 to 3.5 x 10¹⁷ O⁺/cm². In addition, the formation mechanisms of dislocations and stacking faults in SIMOX materials were also proposed. The Hg-based pseudo-MOSFET technique was a very effective in-situ technique to evaluate the electrical quality of low-dose low-energy SIMOX. Based on the comparisons of device parameters of low-dose low-energy SIMOX and commercial SIMOX samples, we found that the quality of top Si layer of SIMOX sample prepared at 100 keV with a dose of 3.5 x 10¹⁷ O⁺/cm² was excellent. However, the interface properties (interfacial trap density) needed to be improved. The dielectric quality of low-dose low-energy SIMOX evaluated by breakdown voltage measurements showed a strong dependency on the microstructure of samples.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Graduate College
    Materials Science and Engineering
    Degree Grantor
    University of Arizona
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