Semiconductor modification and characterization with a scanning probe microscope
Author
Ruskell, Todd Gary, 1969-Issue Date
1996Keywords
Engineering, Electronics and Electrical.Physics, Electricity and Magnetism.
Physics, Condensed Matter.
Engineering, Materials Science.
Advisor
Sarid, Dror
Metadata
Show full item recordPublisher
The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Abstract
The capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.Type
textDissertation-Reproduction (electronic)
Degree Name
Ph.D.Degree Level
doctoralDegree Program
Graduate CollegeOptical Sciences