Semiconductor modification and characterization with a scanning probe microscope
AuthorRuskell, Todd Gary, 1969-
KeywordsEngineering, Electronics and Electrical.
Physics, Electricity and Magnetism.
Physics, Condensed Matter.
Engineering, Materials Science.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractThe capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.
Degree ProgramGraduate College