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dc.contributor.advisorSarid, Droren_US
dc.contributor.authorRuskell, Todd Gary, 1969-
dc.creatorRuskell, Todd Gary, 1969-en_US
dc.date.accessioned2013-04-18T09:32:53Z
dc.date.available2013-04-18T09:32:53Z
dc.date.issued1996en_US
dc.identifier.urihttp://hdl.handle.net/10150/282152
dc.description.abstractThe capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Electricity and Magnetism.en_US
dc.subjectPhysics, Condensed Matter.en_US
dc.subjectEngineering, Materials Science.en_US
dc.titleSemiconductor modification and characterization with a scanning probe microscopeen_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.leveldoctoralen_US
dc.identifier.proquest9713377en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.namePh.D.en_US
dc.identifier.bibrecord.b34372167en_US
refterms.dateFOA2018-06-15T10:37:46Z
html.description.abstractThe capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.


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