Particle formation during reactive ion etching of silicon with SF(6)
dc.contributor.advisor | Peterson, T. W. | en_US |
dc.contributor.author | Garrity, Mary Patricia, 1961- | |
dc.creator | Garrity, Mary Patricia, 1961- | en_US |
dc.date.accessioned | 2013-04-18T09:49:37Z | |
dc.date.available | 2013-04-18T09:49:37Z | |
dc.date.issued | 1997 | en_US |
dc.identifier.uri | http://hdl.handle.net/10150/282512 | |
dc.description.abstract | Particle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate reactor is studied. Particles are extracted from the exhaust and collected on the wafer. Particle composition and morphology depend on plasma power, etch time, gas composition, and pressure. Primary particles are tens of nanometers in diameter and spherical and chain aggregates as large as 5 mum are observed. Critical powers and etch times are required for the formation of these aggregates. The presence of major gas phase species is determined using mass spectroscopy and optical emission spectroscopy. A three stage mechanism for describing the particle formation (nucleation, heterogeneous growth, and coagulation) is presented. Particle precursor and heterogeneous sources are determined from plasma-dependent, homogeneous, gas-phase reactions and etch product distributions predicted from electrical and etch rate measurements. Dissociation of SF6 into lower molecular weight SFx species and unsaturated SiFx species are primarily responsible for nuclei formation and subsequent, rapid heterogeneous growth by attachment of positive ions. | |
dc.language.iso | en_US | en_US |
dc.publisher | The University of Arizona. | en_US |
dc.rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. | en_US |
dc.subject | Engineering, Chemical. | en_US |
dc.subject | Engineering, Materials Science. | en_US |
dc.title | Particle formation during reactive ion etching of silicon with SF(6) | en_US |
dc.type | text | en_US |
dc.type | Dissertation-Reproduction (electronic) | en_US |
thesis.degree.grantor | University of Arizona | en_US |
thesis.degree.level | doctoral | en_US |
dc.identifier.proquest | 9814401 | en_US |
thesis.degree.discipline | Graduate College | en_US |
thesis.degree.discipline | Chemical and Environmental Engineering | en_US |
thesis.degree.name | Ph.D. | en_US |
dc.description.note | This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution images for any content in this item, please contact us at repository@u.library.arizona.edu. | |
dc.identifier.bibrecord | .b37742395 | en_US |
dc.description.admin-note | Original file replaced with corrected file October 2023. | |
refterms.dateFOA | 2018-09-05T18:31:27Z | |
html.description.abstract | Particle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate reactor is studied. Particles are extracted from the exhaust and collected on the wafer. Particle composition and morphology depend on plasma power, etch time, gas composition, and pressure. Primary particles are tens of nanometers in diameter and spherical and chain aggregates as large as 5 mum are observed. Critical powers and etch times are required for the formation of these aggregates. The presence of major gas phase species is determined using mass spectroscopy and optical emission spectroscopy. A three stage mechanism for describing the particle formation (nucleation, heterogeneous growth, and coagulation) is presented. Particle precursor and heterogeneous sources are determined from plasma-dependent, homogeneous, gas-phase reactions and etch product distributions predicted from electrical and etch rate measurements. Dissociation of SF6 into lower molecular weight SFx species and unsaturated SiFx species are primarily responsible for nuclei formation and subsequent, rapid heterogeneous growth by attachment of positive ions. |