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dc.contributor.advisorPeterson, T. W.en_US
dc.contributor.authorGarrity, Mary Patricia, 1961-
dc.creatorGarrity, Mary Patricia, 1961-en_US
dc.date.accessioned2013-04-18T09:49:37Z
dc.date.available2013-04-18T09:49:37Z
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/10150/282512
dc.description.abstractParticle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate reactor is studied. Particles are extracted from the exhaust and collected on the wafer. Particle composition and morphology depend on plasma power, etch time, gas composition, and pressure. Primary particles are tens of nanometers in diameter and spherical and chain aggregates as large as 5 mum are observed. Critical powers and etch times are required for the formation of these aggregates. The presence of major gas phase species is determined using mass spectroscopy and optical emission spectroscopy. A three stage mechanism for describing the particle formation (nucleation, heterogeneous growth, and coagulation) is presented. Particle precursor and heterogeneous sources are determined from plasma-dependent, homogeneous, gas-phase reactions and etch product distributions predicted from electrical and etch rate measurements. Dissociation of SF6 into lower molecular weight SFx species and unsaturated SiFx species are primarily responsible for nuclei formation and subsequent, rapid heterogeneous growth by attachment of positive ions.
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectEngineering, Chemical.en_US
dc.subjectEngineering, Materials Science.en_US
dc.titleParticle formation during reactive ion etching of silicon with SF(6)en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.leveldoctoralen_US
dc.identifier.proquest9814401en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineChemical and Environmental Engineeringen_US
thesis.degree.namePh.D.en_US
dc.description.noteThis item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution images for any content in this item, please contact us at repository@u.library.arizona.edu.
dc.identifier.bibrecord.b37742395en_US
dc.description.admin-noteOriginal file replaced with corrected file October 2023.
refterms.dateFOA2018-09-05T18:31:27Z
html.description.abstractParticle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate reactor is studied. Particles are extracted from the exhaust and collected on the wafer. Particle composition and morphology depend on plasma power, etch time, gas composition, and pressure. Primary particles are tens of nanometers in diameter and spherical and chain aggregates as large as 5 mum are observed. Critical powers and etch times are required for the formation of these aggregates. The presence of major gas phase species is determined using mass spectroscopy and optical emission spectroscopy. A three stage mechanism for describing the particle formation (nucleation, heterogeneous growth, and coagulation) is presented. Particle precursor and heterogeneous sources are determined from plasma-dependent, homogeneous, gas-phase reactions and etch product distributions predicted from electrical and etch rate measurements. Dissociation of SF6 into lower molecular weight SFx species and unsaturated SiFx species are primarily responsible for nuclei formation and subsequent, rapid heterogeneous growth by attachment of positive ions.


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