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    OPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDE

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    Author
    Ballart, Ralph
    Issue Date
    1980
    Keywords
    Silicon carbide -- Effect of radiation on.
    Silicon carbide.
    Amorphous semiconductors.
    Advisor
    Young, Richard
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    The reflectivity of crystalline and radiation-damaged silicon carbide and silicon has been measured in the 2-12 eV spectral region. Measurements were made using a standard Seya-Namioka Monochrometer which was modified to compensate for the fluctuations of the light source and interfaced to a micro-computer to facilitate data collection. The reflectivities of crystalline silicon carbide polytypes 6H, 15R, and 4H were found to be similar and the reflectivity of 3C-SiC showed agreement with the predictions of published band structure calculations. The observed reflectivity of radiation damage SiC agreed with the prediction of a simple model which takes into account the breakdown of k(→) -conservation and uses a realistic Bethe-lattice Hamiltonian to calculate the amorphous valence density of electron states.
    Type
    text
    Dissertation-Reproduction (electronic)
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Graduate College
    Physics
    Degree Grantor
    University of Arizona
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    Dissertations

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