AuthorGarcia, John Phillips, 1956-
AdvisorDereniak, Eustace L.
MetadataShow full item record
PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
AbstractA gallium doped extrinsic silicon (Si:Ga) photoconductive detector was tested for sensitivity and quickness of response. The developmental goal for this detector material was high speed operation without compromised detectivity (D*). The high speed, p-type infrared photoconductor, with photoconductive gain less than unity, was tested at 10.5 μm to determine an experimental value for the detectivity-bandwidth product of D*f* = 3.8 x 10¹⁸ cm-Hz³/²/W. Subsequently a theoretical model taking into account the optical absorption profile and majority carrier transport processes within the detector was developed which agreed with the experimental data.
Degree ProgramGraduate College