High contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μm
Author
Krol, Mark Francis, 1966-Issue Date
1992Advisor
Peyghambarian, Nasser
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The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Abstract
A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5 x 10¹⁷ cm⁻³ The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.Type
textThesis-Reproduction (electronic)
Degree Name
M.S.Degree Level
mastersDegree Program
Graduate CollegeOptical Sciences