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dc.contributor.authorAlwardi, Milad, 1958-
dc.creatorAlwardi, Milad, 1958-en_US
dc.date.accessioned2013-05-16T09:49:34Z
dc.date.available2013-05-16T09:49:34Z
dc.date.issued1986en_US
dc.identifier.urihttp://hdl.handle.net/10150/291980
dc.language.isoen_USen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.subjectSemiconductor switches.en_US
dc.subjectCryoelectronics.en_US
dc.subjectMaterials at low temperatures.en_US
dc.titleANALYSIS AND DESIGN OF N-CHANNEL MOS TRANSISTORS FOR CRYOGENIC SWITCHING APPLICATIONSen_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.identifier.oclc15068449en_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelmastersen_US
dc.identifier.proquest1327860en_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.nameM.S.en_US
dc.identifier.bibrecord.b1583542xen_US
refterms.dateFOA2018-06-25T17:18:58Z


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