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dc.contributor.advisorLeRoy, Brian
dc.contributor.authorCurley, Sheridan Sharer
dc.creatorCurley, Sheridan Shareren_US
dc.date.accessioned2013-08-07T22:04:20Z
dc.date.available2013-08-07T22:04:20Z
dc.date.issued2013
dc.identifier.urihttp://hdl.handle.net/10150/297548
dc.description.abstractThis thesis covers useful methods for the identification of atomically thin molybdenum disulfide (MoS₂) flakes, outlines fabrication steps for transistors from identified monolayer MoS₂ samples, and details several potential measurements from such transistors. Identification techniques covered include atomic force microscopy, Raman analysis, and photoluminescence measurements of MoS₂. Detailed manufacturing procedures for different types of transistor devices are presented, beginning from large, bulk MoS₂ crystals, proceeding to wiring and testing of functional devices. Although transport measurements are not provided, all necessary theory and fabrication steps are covered to begin such measurements quickly from a basic initial setup.
dc.language.isoenen_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.titleIdentifications of Monolayer Molybdenum Disulfide Flakes for Transistor Devicesen_US
dc.typetexten_US
dc.typeElectronic Thesisen_US
thesis.degree.grantorUniversity of Arizonaen_US
thesis.degree.levelbachelorsen_US
thesis.degree.disciplineHonors Collegeen_US
thesis.degree.disciplinePhysicsen_US
thesis.degree.nameB.S.en_US
refterms.dateFOA2018-08-30T09:38:20Z
html.description.abstractThis thesis covers useful methods for the identification of atomically thin molybdenum disulfide (MoS₂) flakes, outlines fabrication steps for transistors from identified monolayer MoS₂ samples, and details several potential measurements from such transistors. Identification techniques covered include atomic force microscopy, Raman analysis, and photoluminescence measurements of MoS₂. Detailed manufacturing procedures for different types of transistor devices are presented, beginning from large, bulk MoS₂ crystals, proceeding to wiring and testing of functional devices. Although transport measurements are not provided, all necessary theory and fabrication steps are covered to begin such measurements quickly from a basic initial setup.


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