• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • GPSC Student Showcase Posters
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • GPSC Student Showcase Posters
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    Passivation of III-V Semiconductor Surfaces

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    UA 2013 Showcase Poster - Yissel ...
    Size:
    2.865Mb
    Format:
    PDF
    Download
    Author
    Contreras, Yissel
    Muscat, Anthony
    Affiliation
    Department of Chemical and Environmental Engineering, University of Arizona
    Department of Chemical and Environmental Engineering, University of Arizona
    Issue Date
    2013-11-08
    Keywords
    III-V semiconductors
    passivation
    self-assembled monolayers
    XPS
    
    Metadata
    Show full item record
    Rights
    Copyright © is held by the author.
    Collection Information
    This item is part of the GPSC Student Showcase collection. For more information about the Student Showcase, please email the GPSC (Graduate and Professional Student Council) at gpsc@email.arizona.edu.
    Abstract
    Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power. III-V semiconductors have charge mobilities that are much higher than that of silicon making them suitable candidates for boosting the performance of new electronic devices. However, III-V semiconductors oxidize rapidly in air after oxide etching and the poor quality of the resulting oxide limits device performance. Our goal is to design a liquid-phase process flow to etch the oxide and passivate the surface of III-V semiconductors and to understand the mechanism of layer formation.Self-assembled monolayers of 1-eicosanethiol (ET) dissolved in ethanol, IPA, chloroform, and toluene were deposited on clean InSb(100) surfaces. The InSb passivated surfaces were characterized after 0 to 60 min of exposure to air. Ellipsometry measurements showed a starting overlayer thickness (due to ET, oxides, or both) of about 20 Å in chloroform and from 32 to 35 Å in alcohols and toluene. Surface composition analysis of InSb with X-ray photoelectron spectroscopy after passivation with 0.1 mM ET in ethanol confirmed the presence of ET and showed that oxygen in the Auger region is below detection limits up to 3 min after the passivation. Our results show that a thiol layer on top of a non-oxidized or low-oxide semiconductor surface slows oxygen diffusion in comparison to a surface with no thiol present, making this a promising passivation method of III-V semiconductors.
    Sponsors
    Intel Corporation, National Council of Science and Technology (CONACYT, México)
    Collections
    GPSC Student Showcase Posters

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.