The UA Campus Repository is experiencing systematic automated, high-volume traffic (bots). Temporary mitigation measures to address bot traffic have been put in place; however, this has resulted in restrictions on searching WITHIN collections or using sidebar filters WITHIN collections. You can still Browse by Title/Author/Year WITHIN collections. Also, you can still search at the top level of the repository (use the search box at the top of every page) and apply filters from that search level. Export of search results has also been restricted at this time. Please contact us at any time for assistance - email repository@u.library.arizona.edu.
Passivation of III-V Semiconductor Surfaces
| dc.contributor.author | Contreras, Yissel | |
| dc.contributor.author | Muscat, Anthony | |
| dc.date.accessioned | 2013-12-02T17:47:51Z | |
| dc.date.available | 2013-12-02T17:47:51Z | |
| dc.date.issued | 2013-11-08 | |
| dc.identifier.uri | http://hdl.handle.net/10150/306095 | |
| dc.description.abstract | Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power. III-V semiconductors have charge mobilities that are much higher than that of silicon making them suitable candidates for boosting the performance of new electronic devices. However, III-V semiconductors oxidize rapidly in air after oxide etching and the poor quality of the resulting oxide limits device performance. Our goal is to design a liquid-phase process flow to etch the oxide and passivate the surface of III-V semiconductors and to understand the mechanism of layer formation.Self-assembled monolayers of 1-eicosanethiol (ET) dissolved in ethanol, IPA, chloroform, and toluene were deposited on clean InSb(100) surfaces. The InSb passivated surfaces were characterized after 0 to 60 min of exposure to air. Ellipsometry measurements showed a starting overlayer thickness (due to ET, oxides, or both) of about 20 Å in chloroform and from 32 to 35 Å in alcohols and toluene. Surface composition analysis of InSb with X-ray photoelectron spectroscopy after passivation with 0.1 mM ET in ethanol confirmed the presence of ET and showed that oxygen in the Auger region is below detection limits up to 3 min after the passivation. Our results show that a thiol layer on top of a non-oxidized or low-oxide semiconductor surface slows oxygen diffusion in comparison to a surface with no thiol present, making this a promising passivation method of III-V semiconductors. | |
| dc.description.sponsorship | Intel Corporation, National Council of Science and Technology (CONACYT, México) | en_US |
| dc.language.iso | en_US | en_US |
| dc.rights | Copyright © is held by the author. | en_US |
| dc.subject | III-V semiconductors | en_US |
| dc.subject | passivation | en_US |
| dc.subject | self-assembled monolayers | en_US |
| dc.subject | XPS | en_US |
| dc.title | Passivation of III-V Semiconductor Surfaces | en_US |
| dc.contributor.department | Department of Chemical and Environmental Engineering, University of Arizona | en_US |
| dc.contributor.department | Department of Chemical and Environmental Engineering, University of Arizona | en_US |
| dc.description.collectioninformation | This item is part of the GPSC Student Showcase collection. For more information about the Student Showcase, please email the GPSC (Graduate and Professional Student Council) at gpsc@email.arizona.edu. | en_US |
| refterms.dateFOA | 2018-08-13T16:08:17Z | |
| html.description.abstract | Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power. III-V semiconductors have charge mobilities that are much higher than that of silicon making them suitable candidates for boosting the performance of new electronic devices. However, III-V semiconductors oxidize rapidly in air after oxide etching and the poor quality of the resulting oxide limits device performance. Our goal is to design a liquid-phase process flow to etch the oxide and passivate the surface of III-V semiconductors and to understand the mechanism of layer formation.Self-assembled monolayers of 1-eicosanethiol (ET) dissolved in ethanol, IPA, chloroform, and toluene were deposited on clean InSb(100) surfaces. The InSb passivated surfaces were characterized after 0 to 60 min of exposure to air. Ellipsometry measurements showed a starting overlayer thickness (due to ET, oxides, or both) of about 20 Å in chloroform and from 32 to 35 Å in alcohols and toluene. Surface composition analysis of InSb with X-ray photoelectron spectroscopy after passivation with 0.1 mM ET in ethanol confirmed the presence of ET and showed that oxygen in the Auger region is below detection limits up to 3 min after the passivation. Our results show that a thiol layer on top of a non-oxidized or low-oxide semiconductor surface slows oxygen diffusion in comparison to a surface with no thiol present, making this a promising passivation method of III-V semiconductors. |
