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    Mechanical Properties of Symmetric Tilt Grain Boundaries in Silicon and Silicon Carbide: A Molecular Dynamics Study

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    Author
    Bringuier, Stefan
    Issue Date
    2015
    Keywords
    Grain Boundary Dynamics
    Mechanical Properties
    Molecular Dynamics
    Silicon
    Silicon-Carbide
    Materials Science & Engineering
    Bicrystals
    Advisor
    Muralidharan, Krishna
    
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    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Embargo
    Release after 31-Jul-2015
    Abstract
    The mechanical properties of polycrystalline materials are governed by the underlying microstructure. In this context, in this dissertation, the role of grain boundaries on the mechanical response of two technologically important materials namely silicon and silicon carbide are examined. In particular, the dynamics of silicon carbide and silicon symmetric tilt bicrystals under shear load are characterized via molecular dynamics simulations. Cubic silicon carbide bicrystals with low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary at low temperatures. With increasing temperature, stick-slip becomes less pronounced due to competing dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior. When a single layer graphene sheet is introduced at the grain boundary of the symmetric tilt silicon-carbide bicrystals, the resultant shear response is dictated by the orientation of the graphene sheet. Specifically, when the graphene layer is oriented perpendicular to the gain boundary, stick-slip behavior displayed by the low-angle grain boundaries is inhibited, though both low-angle and high-angle grain boundaries exhibit displacement along crystallographic planes parallel with the applied shear direction. On the other hand, when the graphene sheet is parallel to the grain boundary, shear deformation at the grain boundary for both low-angle and high-angle bicrystals is diminished. In silicon bicrystals, high-angle grain boundaries demonstrate coupled motion, characterized by an additional normal motion of the grain boundary. Interestingly, this phenomenon was observed previously in metallic materials. Further, the grain boundary coupling factor, which is ratio of the grain boundary normal velocity to the grain translation velocity, matches the predicted geometric value. The underlying atomic scale mechanisms that govern the grain boundary coupled motion consists of concerted rotations of silicon tetrahedra within the grain boundary. For low-angle grain boundaries in silicon, the activation of dislocation glide along the predicted slip-plane takes precedence and no grain boundary coupling is observed. This behavior is similar to that of silicon carbide seen at high-temperatures but for silicon it occurs for a large temperature window.
    Type
    text
    Electronic Dissertation
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Graduate College
    Materials Science & Engineering
    Degree Grantor
    University of Arizona
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