Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.
AuthorClark, David Robert
Electric insulators and insulation -- Silicon nitride.
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PublisherThe University of Arizona.
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Degree ProgramElectrical Engineering