Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.
Author
Clark, David RobertIssue Date
1981Keywords
Field-effect transistors.Dielectric films.
Electric insulators and insulation -- Silicon nitride.
Silicon nitride.
Metadata
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The University of Arizona.Rights
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.Type
textThesis-Reproduction (electronic)
Degree Name
M.S.Degree Level
mastersDegree Program
Electrical EngineeringGraduate College