• Login
    View Item 
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    •   Home
    • UA Graduate and Undergraduate Research
    • UA Theses and Dissertations
    • Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of UA Campus RepositoryCommunitiesTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournalThis CollectionTitleAuthorsIssue DateSubmit DateSubjectsPublisherJournal

    My Account

    LoginRegister

    About

    AboutUA Faculty PublicationsUA DissertationsUA Master's ThesesUA Honors ThesesUA PressUA YearbooksUA CatalogsUA Libraries

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular Authors

    Rinsing Of Wafers After Wet Processing: Simulation And Experiments

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    azu_etd_14209_sip1_m.pdf
    Size:
    8.905Mb
    Format:
    PDF
    Download
    Author
    Chiang, Chieh-Chun
    Issue Date
    2015
    Keywords
    Materials Science & Engineering
    Advisor
    Raghavan, Srini
    
    Metadata
    Show full item record
    Publisher
    The University of Arizona.
    Rights
    Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
    Abstract
    In semiconductor manufacturing, a large amount (50 billion gallons for US semiconductor fabrication plants in 2006) of ultrapure water (UPW) is used to rinse wafers after wet chemical processing to remove ionic contaminants on surfaces. Of great concern are the contaminants left in narrow (tens of nm), high-aspect-ratio (5:1 to 20:1) features (trenches, vias, and contact holes). The International Technology Roadmap for Semiconductors (ITRS) stipulates that ionic contaminant levels be reduced to below ~ 10¹⁰ atoms/cm². Understanding the bottlenecks in the rinsing process would enable conservation of rinse water usage. A comprehensive process model has been developed on the COMSOL platform to predict the dynamics of rinsing of narrow structures on patterned SiO₂ substrates initially cleaned with NH₄OH. The model considers the effect of various mass-transport mechanisms, including convection and diffusion/dispersion, which occur simultaneously with various surface phenomena, such as adsorption and desorption of impurities. The influences of charged species in the bulk and on the surface, and their induced electric field that affect both transport and surface interactions, have been addressed. Modeling results show that the efficacy of rinsing is strongly influenced by the rate of desorption of adsorbed contaminants, mass transfer of contaminants from the mouth of the feature to the bulk liquid, and the trench aspect ratio. Detection of the end point of rinsing is another way to conserve water used for rinsing after wet processing. The applicability of electrochemical impedance spectroscopy (EIS) to monitor rinsing of Si processed in HF with and without copper contaminant was explored. In the first study, the effect of the nature of surface state (flat band, depletion, or accumulation) of silicon on rinsing rate was investigated. The experimental results show that the state of silicon could affect rinsing kinetics through modulation of ion adsorption. In the second study, silicon was intentionally contaminated by spiking HF with copper ions, cleaned in dilute HCl and then rinsed, and the entire process was followed by continuous impedance measurements. The measured impedance values at different stages have been correlated to the nature of the silicon surface, as characterized by scanning electron microscope (SEM) and inductively coupled plasma mass spectrometry (ICP-MS) methods.
    Type
    text
    Electronic Dissertation
    Degree Name
    Ph.D.
    Degree Level
    doctoral
    Degree Program
    Graduate College
    Materials Science & Engineering
    Degree Grantor
    University of Arizona
    Collections
    Dissertations

    entitlement

     
    The University of Arizona Libraries | 1510 E. University Blvd. | Tucson, AZ 85721-0055
    Tel 520-621-6442 | repository@u.library.arizona.edu
    DSpace software copyright © 2002-2017  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service operated by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.