Show simple item record

dc.contributor.authorAbraham, George
dc.date.accessioned2016-04-14T21:41:00Zen
dc.date.available2016-04-14T21:41:00Zen
dc.date.issued1973-10en
dc.identifier.issn0884-5123en
dc.identifier.issn0074-9079en
dc.identifier.urihttp://hdl.handle.net/10150/605427en
dc.descriptionInternational Telemetering Conference Proceedings / October 09-11, 1973 / Sheraton Inn Northeast, Washington, D.C.en_US
dc.description.abstractSeveral independent physical phenomena in unipolar and bipolar semiconductor pn junction devices and integrated structures lead to voltage and current-controlled negative resistance without the use of external feedback. These include avalanche breakdown, quantum mechanical tunneling, and minority carrier storage. Two complementary types of negative resistances may be utilized as a basis for generating multistable energy levels. The number of stable states and their relative spacings can be readily varied. Without negative resistance interaction, M+1 stable states can be generated where M is the number of negative resistance devices involved. With negative resistance interactions, additional multistability occurs, resulting in a total number of (M+1) + (M-1)!stable states. S-S, N-N, and S-N interactions are analyzed. In the latter case, complementary negative resistances can be made to annihilate each other. Multistate tunnel and avalanche negative resistances have been made to occur in single devices resulting in tristable, quadristable and higher order energy levels. Variable radix counters, oscillators, frequency dividers, and high density memory elements have been fabricated both as hybrid and monolithic integrated circuits.
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.language.isoen_USen
dc.publisherInternational Foundation for Telemeteringen
dc.relation.urlhttp://www.telemetry.org/en
dc.rightsCopyright © International Foundation for Telemeteringen
dc.titleMULTISTATE ANALOG AND DIGITAL INTEGRATED CIRCUITSen_US
dc.typetexten
dc.typeProceedingsen
dc.contributor.departmentUS Naval Research Laboratoryen
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
refterms.dateFOA2018-09-11T08:54:03Z
html.description.abstractSeveral independent physical phenomena in unipolar and bipolar semiconductor pn junction devices and integrated structures lead to voltage and current-controlled negative resistance without the use of external feedback. These include avalanche breakdown, quantum mechanical tunneling, and minority carrier storage. Two complementary types of negative resistances may be utilized as a basis for generating multistable energy levels. The number of stable states and their relative spacings can be readily varied. Without negative resistance interaction, M+1 stable states can be generated where M is the number of negative resistance devices involved. With negative resistance interactions, additional multistability occurs, resulting in a total number of (M+1) + (M-1)!stable states. S-S, N-N, and S-N interactions are analyzed. In the latter case, complementary negative resistances can be made to annihilate each other. Multistate tunnel and avalanche negative resistances have been made to occur in single devices resulting in tristable, quadristable and higher order energy levels. Variable radix counters, oscillators, frequency dividers, and high density memory elements have been fabricated both as hybrid and monolithic integrated circuits.


Files in this item

Thumbnail
Name:
ITC_1973_73-04-5.pdf
Size:
972.4Kb
Format:
PDF

This item appears in the following Collection(s)

Show simple item record