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AbstractThe analog memory device is a combination of a bipolar and a MOSFET device which stores information in analog form for several hours or more with no degradation of data. The emitter base junction of a bipolar transistor is covered with an SiO₂ layer and a voltage is applied to this point. With zero volts applied, the unit acts as a bipolar transistor. Increasing the voltage at this point increases the emitter injection efficiency of the bipolar transistor, which in turn increases the current gain of the device. An SiO₂ layer with no leakage paths can retain the charge applied to it for long periods of time; thus the gain will remain at this level as long as the charge remains on the oxide layer. A large number of such devices can be fabricated on a single chip. Such devices combined with other integrated circuits can be used, for example, for automatic equalization of transmission lines, echo suppression, and correlation detection.
SponsorsInternational Foundation for Telemetering